Semiconductor optical amplifier having a non-uniform injection current density

ABSTRACT

A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device.

RELATED APPLICATION

This application is related to, and claims priority from, U.S.Provisional Patent Application Ser. No. 60/649,307, filed on Feb. 2,2005, of the same title, the disclosure of which is incorporated here byreference.

BACKGROUND

The present invention relates generally to semiconductor opticalamplifiers and, more particularly, to semiconductor optical amplifiershaving an injection current with a non-uniform density across thedevice.

Technologies associated with the communication of information haveevolved rapidly over the last several decades. Optical informationcommunication technologies have evolved as the technology of choice forbackbone information communication systems due to, among other things,their ability to provide large bandwidth, fast transmission speeds andhigh channel quality. Semiconductor lasers and optical amplifiers areused in many aspects of optical communication systems, for example togenerate optical carriers in optical transceivers and to generateoptically amplified signals in optical transmission systems. Among otherthings, optical amplifiers are used to compensate for the attenuation ofoptical data signals transmitted over long distances.

There are several different types of optical amplifiers being used intoday's optical communication systems. In erbium-doped fiber amplifiers(EDFAs) and Raman amplifiers, the optical fiber itself acts as a gainmedium that transfers energy from pump lasers to the optical data signaltraveling therethrough. In semiconductor optical amplifiers (SOAs), anelectrical current is used to pump the active region of a semiconductordevice. The optical signal is input to the SOA from the optical fiberwhere it experiences gain due to stimulated emission as it passesthrough the active region of the SOA.

The electrical pumping current is typically injected via an electrode.Consider, for example, the ridge-waveguide type SOA 28 structureillustrated in the cross-section of FIG. 1( a). Therein a multi-layeractive (gain) region 30 is sandwiched between the substrate layer 32 andthe residual cladding layer 34. Those skilled in the art will appreciatethat any gain structure can be employed as active region 30, e.g.,multiple quantum well separate confinement heterostructures and/or bulkmaterials can be used to fabricate gain section 30. Multiple quantumwells (not shown) may be provided in gain section 30 using variousmaterials, e.g., InAlGaAs, InGaAsP and InP, to create gain section 30using well known techniques. Separate confinement waveguiding layers(not shown) may be provided in gain section 30 using various materialssuch as InGaAsP. The substrate layer 32 and residual cladding layer 34can be formed from, for example, InP. An etch stop layer 36 is disposedon top of the residual cladding layer 34. The ridge is formed fromanother InP layer 38 capped by a different semiconductor layer 39, forexample InGaAs, and a current-confining dielectric layer 41. A contactopening is etched in the dielectric layer 41 and a metal electrode layer40 is disposed on top of the dielectric layer 41 such that it makescontact with the top semiconductor ridge layer 39. Current is injectedvia electrode 40 into the SOA 28, so that gain is applied to an opticalsignal passing through the active region 30. However, gain is onlyapplied in the pumped region 42 of the active region 30. Outside of thepumped region 42, where there is no pumping current, the optical signalsuffers from energy absorption as it passes through the SOA 28. Theinput optical power Pin injected into the SOA 28 is amplified accordingto P_(out)=G P_(in), where G is the single pass gain over the length Lof the SOA 28 such that G=e^(gnet L). The net gain g_(net) is given byg_(net)=Γg−α where Γ, g, and α are the optical confinement factor, thematerial gain and the optical loss, respectively.

The injection electrode can be fabricated along the length of the deviceas a metallization layer 40 contacting the top semiconductor ridge layer39 by first removing dielectric material 41 prior to deposition of themetallization layer 40 as seen in FIG. 1( b). Therein, the dielectricmaterial 41 is removed between the two dotted lines below themetallization layer to create the “T-shaped” contact shown incross-section in FIG. 1( a). The injection electrode is connected to acurrent source or similar device to provide the injection current to theSOA 28. As can be seen from FIG. 1( b), conventional SOAs employinjection electrodes that have a uniform surface area across thewaveguide, resulting in the injection current density being uniformacross the length of the SOA 28. It should be noted that although theinjection current density is uniform along the length of the SOA, thecarrier concentration is not necessarily uniform due to variation inoptical intensity along the length of the SOA. Also, the effects of theinjected current are not uniform across the length of the device. Forexample, on the input side of the SOA 28, the effect of the injectioncurrent density on the noise figure (NF) of the SOA is of greaterconcern than the effect of the injection current density on saturationpower (P_(sat)) of the SOA. On the output side of the SOA, by way ofcontrast, the effect of the injection current density on the P_(sat) ofthe device is more important.

Accordingly, Applicants have developed SOA devices and methods whichprovide for control of the injection current and injection currentdensity to, among other things, provide SOAs which have improved gainlinearity, reduced crosstalk, and better efficiency through optimizedcurrent utilization.

SUMMARY

Systems and methods according to the present invention address this needand others by providing efficient SOA devices and methods of operatingsuch devices. According to exemplary embodiments of the presentinvention, semiconductor optical amplifiers have an injection currentdensity which is controlled to provide, among other things, both a lownoise figure at the input stage of the device and a high saturationpower at the output stage of the device. According to one exemplaryembodiment, this can be accomplished by varying the electricalresistance of the injection electrode along the length of the device toachieve a non-uniform injection current density. More specifically, theinjection current density can be increased at the input stage of thedevice and increased at the output stage of the device as compared tothe center region of the device. According to an exemplary embodiment,this can be accomplished by providing a patterned opening of thedielectric layer below the metallization layer which provides a varyingresistance along the length of the device.

For example, according to one exemplary embodiment of the presentinvention, a semiconductor optical amplifier includes a substrate, again section, disposed on the substrate, for providing gain to anoptical signal, a current injection electrode for receiving current andproviding the current to the gain section, wherein a current densityassociated with the current varies across a length of the gain section.

According to another exemplary embodiment of the present invention, amethod for amplifying an optical signal includes the steps of providinga gain section on a substrate, injecting a pumping current into the gainsection and varying a current density associated with the current acrossa length of the gain section.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings illustrate exemplary embodiments of thepresent invention, wherein:

FIG. 1( a) is a cross-section of a ridge-waveguide type SOA in whichexemplary embodiments of the present invention may be implemented;

FIG. 1( b) is a top view of a conventional injection current electrodewith a current source attached thereto;

FIG. 2( a) is a top view of an injection current electrode according toan exemplary embodiment of the present invention;

FIG. 2( b) illustrates a 3D perspective of a structure with patternedcontact vias according to an exemplary embodiment of the presentinvention;

FIG. 3 is a graph showing an exemplary relationship between contact viaspacing and series resistance of the contact electrode;

FIG. 4 is a graph showing exemplary relationships between saturationpower and gain for a number of different contact via spacings;

FIG. 5 is a graph depicting exemplary SOA gain as a function ofwavelength for different contact via spacings; and

FIG. 6 is a top view of an injection current electrode according toanother exemplary embodiment of the present invention;

FIG. 7 is a graph depicting exemplary SOA gain as a function of outputpower for a device including the injection current electrode illustratedin FIG. 6;

FIG. 8 is a graph depicting exemplary SOA gain as a function ofwavelength for a device including the injection current electrodeillustrated in FIG. 6; and

FIG. 9 is a top view of a ridge-waveguide type SOA according to anotherexemplary embodiment of the present invention.

DETAILED DESCRIPTION

The following detailed description of the invention refers to theaccompanying drawings. The same reference numbers in different drawingsidentify the same or similar elements. Also, the following detaileddescription does not limit the invention. Instead, the scope of theinvention is defined by the appended claims.

Devices and methods according to exemplary embodiments of the presentinvention provide semiconductor optical amplifiers whose overallefficiency of operation is improved. One challenge posed by conventionalSOAs is that the gain of the device varies as a function of the power ofthe optical signal. It will be appreciated that as the applications forSOAs vary, so do the optical power levels. Accordingly, for systemdesign purposes, it would be preferable to provide SOAs wherein the gainis relatively constant as a function of optical power levels. Asmentioned earlier, the gain of an SOA can be expressed as a function ofthe material gain coefficient g. However, this gain coefficient variesas:g=g ₀/(1+P/Psat)where P is the optical power in the SOA. Those skilled in the art willappreciate that increasing the saturation power of semiconductor opticalamplifiers therefore has the resulting benefit of reducing gainvariations relative to optical power. Accordingly, one of the objects ofthe present invention is to provide SOAs and methods of making SOAswhich have increased saturation power relative to conventional devices.According to exemplary embodiments of the present invention, this can beaccomplished by varying the injection current density along the lengthof the device, i.e., along the gain region of the device.

Varying the injection current density along the length of the gainregion can be accomplished in a number of different ways. According toone exemplary embodiment of the present invention, this is accomplishedby varying the series resistance in the injection electrode. By, forexample, creating a tailored pattern of openings in the dielectric layer41, as compared to the uniform rectangular opening depicted by thehidden lines in FIG. 1( b), the series resistance experienced by theinjection current can be varied along the length of the device,resulting in a non-uniform injection current density. For example, asseen in FIG. 2( a), a plurality of contact openings 50, 51 can beprovided in the dielectric layer 41 below the metallization layer 40 toexpose portions of the semiconductor contact layer 39 therebelow. Themetal electrode layer 40 is then deposited and only makes contact to theunderlying semiconductor layer through the openings 50, 51 in thedielectric layer. Openings in dielectric layers through which currentflows are often referred to as ‘vias’, hence the openings 50, 51 arecalled ‘contact vias’. In this example, the openings are circular andhave the same diameter, however the spacing between the openings variesfrom the input side of the device to the output side. More specifically,the spacing y between the openings 50 on the input side is greater thanthe spacing x between the openings 51 on the output side. A 3-Dperspective view illustrating a structure with patterned contact viasaccording to an exemplary embodiment of the present invention is shownin FIG. 2( b). Those skilled in the art will appreciate that the contactvias can have an arbitrary shape (e.g. circular, rectangular, oval,octagonal) and that the size of the contact via can also vary along thedevice.

In this example, the series resistance in the contact electrode varieslinearly as a function of the contact hole spacing as shown by the graphof FIG. 3. These results were obtained on 2 mm long ridge-waveguidelaser devices fabricated with 2.5 micrometer (μm) diameter contact viaswith spacings that were uniform along the length of the device. Theseries resistance was measured for devices having contact vias withcenter-to-center spacing of 4, 20 and 50 μm as plotted in FIG. 3.Therein, ridge-waveguide type SOA were fabricated 2 mm in length withcontact via spacing that varied linearly from 4 μm at the output side ofthe device to 20 and 50 μm at the input side of the device. Tests wereperformed to determine the impact of varying the resistance of theinjection current electrode along the length of the devices with respectto saturation power. FIG. 4 shows results of these tests as they relateto gain and saturation power for a fixed injection current of 600 mA.The upper plot 62 represents testing of a ridge-waveguide type SOAhaving a conventional injection current electrode, i.e., of the typeillustrated in FIG. 1( b), with a uniform injection current electroderesistance along the length of the device. From FIG. 4, it can be seenthat the measured saturation power for this device was 15.5 dBm. Testswere also performed on devices in accordance with the present inventionwhich were structurally the same as the device used to generate plot 62,with the exception that the resistance in the current injectionelectrode was varied along the length of the device. More specifically,plot 64 reflects the performance of a device wherein the contact viaspacing was varied from 4 μm at the output side of the device to 20 μmat the input side of the device. This device was measured to have asaturation power of 17.8 dBm.

Plot 66 resulted from measurements taken from yet another similar devicewherein the contact via spacing varied from 4 μm at the output side ofthe device to 50μ at the input side of the device. This device wasmeasured to have a saturation power of 19.0 dBm. Thus, it can be seenthat the larger range over which the contact via spacing is increasedfrom the output side of the device to the input side of the device, thegreater the resulting saturation power of the device for the same valueof injection current. In this example the center-to-center spacingbetween contact vias varied linearly along the length of the device,however, those skilled in the art will appreciate that otherdistributions can be used such as an exponential or parabolic variationof the via spacings along the length of the device.

However, Applicants have also realized that increasing the saturationpower of SOAs using this exemplary technique has some tradeoffs. Morespecifically, as seen in the graph of FIG. 5, it can be seen that thesmall-signal gain of SOA devices according to the present invention isless than that of conventional devices having a uniform currentelectrode resistance. Therein, the curve 70 represents the small-signalgain for conventional devices across the wavelength spectrum from 1500nm to 1600 nm. It can be seen that curve 70 is above both curves 72 and74, which represent the gain vs. wavelength plots for devices having acontact hole spacing of 4-20 microns and 4-50 microns, respectively.Thus there is a tradeoff between increasing the saturation power of SOAsin the manner described above and reducing the small-signal gain of suchSOAs. One solution is to increase the length of the device to offset thereduction in gain.

However, for some applications, the device length may be constrained.Thus, another aspect of the present invention involves, for example,selecting a contact hole spacing that provides increased saturationpower with an acceptable small-signal gain while also decreasing thenoise figure. Accordingly, another exemplary embodiment will now bedescribed with respect to FIGS. 6-9. In this example, the active regionof the SOA includes a thin tensile strained bulk region in a separateconfinement hetero-structure (SCH). The thickness of the active regionis such that it will increase the saturation power of the device, whilethe tensile strain was adjusted to decrease the polarization dependentgain (PDG). Since, this exemplary device does not have mode expanders atthe input and output, the SCH thickness is selected to provide high gainwhile keeping the ellipticity of the mode less than two in order toreduce the coupling losses using aspheric lenses. In this example, theSOA is 1.5 mm long and fabricated using ridge-waveguide processingsimilar to FIG. 1( a). The ridge width in this exemplary device is 3.2μm. The waveguide is angled at six degrees relative to the facet toreduce reflections, and the facets are anti-reflection coated. As shownin FIG. 6, the continuous metal electrode contact layer 100 of thedevice includes three sections. The first section is a pre-amp section102 which includes, in this exemplary embodiment, 4 μm contact viaspacing. A gain section 104 follows the pre-amp section 102 and has, inthis exemplary embodiment, 20 μm contact via spacing. Then, after thegain section 104, the contact layer 100 has a power amp section 106 withthe contact vias spaced 4 μm apart from one another. The length of thepre-amp, gain and power amp sections in this purely illustrativeexemplary embodiment are 265 μm, 750-μm and 485 μm, respectively for atotal device length of 1.5 mm. In this exemplary embodiment, a separatepre-amp section is used to reduce the SOA noise figure (NF) since theoverall NF of an amplifier is determined primarily by the NF of thefirst stage. The NF of an SOA decreases sharply with injection currentas the bias increases beyond the transparency current and becomesindependent of injection current when biased at approximately 4-5 timesthe transparency current. Hence, by increasing current density in theinput section of a device, the overall NF is reduced. The power-ampsection 106 is provided in order to increase the saturation power of thedevice by injecting a larger amount of current than in the gain section104.

According to the purely illustrative example shown in FIG. 6, it isestimated that for a 500 mA drive current approximately 111 mA isinjected in the pre-amp section, 167 mA in the gain section, and 222 mAin the power-amp section. This non-uniform current distribution can beachieved using a single contact electrode and current source. Deviceshaving the exemplary contact electrode layer 100 illustrated in FIG. 6were evaluated for saturation power, gain, noise figure, andpolarization dependent gain at an operating current of 500 mA and anoperating temperature of 25° C. The input and output coupling wasestimated to be less than 2 dB. FIG. 7 shows an exemplary gain versusoutput power curve for an SOA package including contact electrode layer100. Therein, it can be seen that measurements were performed formaximum and minimum gain at 1530 nm and 1550 nm. The minimum saturationpower of 14.6 dBm was measured at 1530 nm whereas the measuredsaturation power at 1550 nm was higher (greater than 15 dBm). FIG. 7also indicates an increase in saturation power by approximately 0.5 dBper 20 nm increase in wavelength. The dependence of the saturation poweron current was also measured and was observed to be linear with theoperating current.

The noise figure for the exemplary SOA package was also measured byinjecting a known input power and measuring the output optical signal tonoise ratio close to the signal. The noise figure for a purely exemplarySOA device built in accordance with the contact electrode layer 100 wasmeasured to be 5.5 dB at 1530 nm and 5.6 dB at 1550 nm. The dependenceof noise figure on current was also evaluated. The noise figure droppedsharply with current around the transparency current and then remainednearly constant after approximately five times the transparency current.

FIG. 8 shows an exemplary gain versus wavelength curve for the same SOApackage that was tested to provide the results shown in FIG. 7.Polarization dependent gain (PDG) is also plotted in the same figure.The PDG is less than 0.8 dB over the C-band from 1530 nm to 1565 nm. Amaximum gain of 19 dB is achieved at 1530 nm. A gain flatness of 4 dB isachieved over the C-band. It should be noted that, for this test, theSOA was intentionally operated on the red side of the gain peakwavelength in order to increase the minimum saturation power and reducethe maximum noise figure in the C-band. If it is important to increasethe gain flatness in a particular application, the peak gain wavelengthcan be increased by changing the composition of the bulk region.

According to another exemplary embodiment of the present invention, thecurrent injection electrode can be fabricated as shown in FIG. 9.Therein, the input side and the output side of the device have contactpads 80 and 82, respectively, created by forming rectangular openings inthe dielectric layer 41. Between the contact pads 80 and 82, a series ofcontact holes 84 can be provided. This exemplary embodiment of thepresent invention, as compared to the exemplary embodiment of FIG. 2,provides more injection current (lower series resistance) to the inputsection of the device. This, in turn, may be beneficial for applicationswhere maintaining an acceptable noise figure (NF) of the SOA device isconsidered to be important, because the NF of an SOA benefits fromhaving a relatively high injection current on the input side. Thecontact holes 84 may have the same or different sizes and may be equallyspaced apart or have a spacing which varies, e.g., exponentially, fromthe input side to the output side of the device.

The above-described exemplary embodiments are intended to beillustrative in all respects, rather than restrictive, of the presentinvention. Thus the present invention is capable of many variations indetailed implementation that can be derived from the descriptioncontained herein by a person skilled in the art. For example, thepresent invention is not limited to patterning of only one contactelectrode as a technique for varying the injection current density alongthe length of the device. More than one current injection electrode canbe provided. Additionally, or alternatively, variable resistance can beintroduced below the metallization layer by etching or otherwise varyingthe resistance of the top semiconductor contact layer. All suchvariations and modifications are considered to be within the scope andspirit of the present invention as defined by the following claims. Noelement, act, or instruction used in the description of the presentapplication should be construed as critical or essential to theinvention unless explicitly described as such. Also, as used herein, thearticle “a” is intended to include one or more items.

1. A semiconductor optical amplifier comprising: a substrate; a gainsection, disposed on said substrate, for providing gain to an opticalsignal; a current injection electrode for receiving current andproviding said current to said gain section, wherein a current densityassociated with said current varies across a length of said gainsection, wherein said current density varies across said length of saidgain section as a result of a variable resistance associated with alayer beneath a metallization layer of said current injection electrodeand wherein said current injection electrode includes said metallizationlayer and a dielectric layer, said dielectric layer having a pluralityof openings formed therein wherein said plurality of openings aredisposed in a pattern which creates said variable resistance to saidcurrent along said length of said gain section, wherein said pluralityof openings are circular, each of said plurality of openings having thesame diameter, wherein a spacing between each of said plurality ofopenings increases from an output side of said semiconductor opticalamplifier to an input side of said semiconductor optical amplifier. 2.The semiconductor optical amplifier of claim 1, wherein said spacingincreases exponentially.
 3. The semiconductor optical amplifier of claim1, wherein said diameter is 5 micrometers or less.
 4. The semiconductoroptical amplifier of claim 1, wherein said plurality of openingsincludes a first opening proximate an input side of said gain section, asecond opening proximate an output side of said gain section and aplurality of third openings between said first and second opening.
 5. Asemiconductor optical amplifier comprising: a substrate; a gain section,disposed on said substrate, for providing pain to an optical signal; acurrent injection electrode for receiving current and providing saidcurrent to said gain section, wherein a current density associated withsaid current varies across a length of said gain section, wherein saidcurrent density varies across said length of said gain section as aresult of a variable resistance associated with a layer beneath ametallization layer of said current injection electrode and wherein saidcurrent injection electrode includes said metallization layer and adielectric layer, said dielectric layer having a plurality of openingsformed therein wherein said plurality of openings are disposed in apattern which creates said variable resistance to said current alongsaid length of said gain section, wherein said plurality of openingsincludes a first section proximate an input side of said gain sectionwith one plurality of openings spaced apart from one another by at leastone first distance, a second section proximate an output side of saidgain section with a second plurality of openings spaced apart from oneanother by at least one second distance and a plurality of thirdopenings between said first and second sections, said plurality of thirdopenings spaced apart from one another by at least one third distance,said at least one third distance being greater than said at least onefirst distance and greater than said at least one second distance. 6.The semiconductor optical amplifier of claim 5, wherein said currentinjection electrode includes said metallization layer and asemiconductor contact layer, said semiconductor contact layer having aplurality of openings formed therein.
 7. The semiconductor opticalamplifier of claim 5, including only one current injection electrode. 8.A method for amplifying an optical signal comprising the steps of:injecting a pumping current into a gain section; varying a currentdensity associated with said current across a length of said gainsection by providing a variable resistance associated with a layerbeneath a metallization layer on said substrate; and wherein saidmetallization layer and a dielectric layer are disposed above said gainsection, wherein said dielectric layer has a plurality of openingsformed therein, wherein said plurality of openings are disposed in apattern which creates said variable resistance to said current alongsaid length of said gain section, wherein a spacing between each of saidplurality of openings increases from an output side of saidsemiconductor optical amplifier to an input side of said semiconductoroptical amplifier.
 9. The method of claim 8, wherein said plurality ofopenings are circular, each of said plurality of openings having thesame diameter.
 10. The method of claim 8, wherein said spacing increasesexponentially.
 11. The method of claim 9, wherein said diameter is 5micrometers or less.
 12. The method of claim 8, wherein said pluralityof openings includes a first opening proximate an input side of saidgain section, a second opening proximate an output side of said gainsection and a plurality of third openings between said first and secondopening.
 13. A method for amplifying an optical signal comprising thesteps of: injecting a pumping current into a gain section; varying acurrent density associated with said current across a length of saidpain section by providing a variable resistance associated with a layerbeneath a metallization layer on said substrate; and wherein saidmetallization layer and a dielectric layer are disposed above said gainsection, wherein said dielectric layer has a plurality of openingsformed therein, wherein said plurality of openings are disposed in apattern which creates said variable resistance to said current alongsaid length of said gain section, wherein said plurality of openingsincludes a first section proximate an input side of said gain sectionwith one plurality of openings spaced apart from one another by at leastone first distance, a second section proximate an output side of saidgain section with a second plurality of openings spaced apart from oneanother by at least one second distance and a plurality of thirdopenings between said first and second sections, said plurality of thirdopenings spaced apart from one another by at least one third distance,said at least one third distance being greater than said at least onefirst distance and greater than said at least one second distance. 14.The method of claim 13, further comprising the step of providing saidmetallization layer and a semiconductor contact layer above said gainsection, wherein said semiconductor contact layer has a plurality ofopenings formed therein.
 15. The method of claim 13, wherein said stepof injecting a pumping current into said gain section further comprisesthe step of: injecting said pumping current into said gain section viaonly one electrode.